Material Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, 130 Samsung-ro, Suwon, Gyeonggi-do 16678, Republic of Korea *Phone: 82-31-8061-1090. Email: [email protected].
Abstract: The efficiency of AlGaInP micro light-emitting diodes (micro-LEDs) was far weaker than that of GaN-based micro-LEDs in structure and performance. Consequently, there was an urgent demand to ...
Abstract: We present a significant enhancement of internal quantum efficiency (IQE) exceeding 90% in InGaN-based Micro-light-emitting diodes (Micro-LEDs) achieved through sidewall passivation using ...
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