Mitsubishi Electric is introducing its 6th generation Mega Power Dual (MPD) Insulated Gate Bipolar Transistor (IGBT) modules. The modules, which are for use in power converters such as large ...

IGBT module is compatible with 600V and 1200V types. An alternate approach is to use an epitaxial buffer layer chip (PT structure) that yields lower losses. However, the very thick epitaxy ...

Mitsubishi Electric Corporation (TOKYO:6503) announced today the coming launch of its T-series 2.0kV Insulated Gate Bipolar Transistor (IGBT) Module f ...